| PART |
Description |
Maker |
| IDT7290820 IDT7290820PQF IDT7290820PF IDT7290820BC |
2K x 2K TSI, 16 I/O at 2/4/8Mbps, 5.0V
TSI-TDM Switches
TIME SLOT INTERCHANGE DIGITAL SWITCH 2,048 x 2,048
|
IDT[Integrated Device Technology]
|
| GS881Z18AT-133 GS881Z18AT-133I GS881Z18AT-150 GS88 |
133MHz 8.5ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
150MHz 7.5ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
166MHz 7ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
200MHz 6.5ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
225MHz 6ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
250MHz 5.5ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
|
GSI Technology
|
| VSC9187 |
Telecomm / Datacomm
VSC9187 Bromley - 3045 x 3045 VT1.5 TSI Switch Fabric
VSC9187 Bromley - 3045 x 3045 VT1.5 TSI Switch Fabric
|
Vitesse Semiconductor Corporation
http://
|
| IDT72V71650DA |
8K x 8K TSI, 32 I/O at 2/4/8 or 16Mbps, 3.3V
|
IDT
|
| VSC9191 |
100 Gbps (40 x 40) SONET/SDH TSI Switch with Dual Rate I/O
|
http://
Vitesse Semiconductor Corporation
|
| IBM0418A80QLAB IBM0418A40QLAB |
8Mb( 512K x 18 ) SRAM(8Mb( 512K x 18 )同步CMOS静态RAM)
4Mb( 256K x 18 ) SRAM(4Mb( 256K x 18 )同步CMOS静态RAM) 4Mb的（256 × 18）的SRAMMb的（256 × 18）同步的CMOS静态RAM）的
|
IBM Microeletronics
International Business Machines, Corp.
|
| MT55L512L18P MT55L256L36P |
8Mb ZBT SRAM
|
MICRON[Micron Technology]
|
| ID245G01 |
8MB Flash Memory Card
|
SHARP[Sharp Electrionic Components]
|
| MT58L512L18F MT58L256L32F |
(MT58Lxxxx) 8Mb SYNCBURST SRAM
|
Micron Semiconductor
|
| DS1265W DS1265W-DS1265W-150 DS1265W-100 DS1265W-15 |
3.3V 8Mb Nonvolatile SRAM
From old datasheet system
|
MAXIM - Dallas Semiconductor
Dallas Semiconducotr
|
| WCMC8016V9X-FI70 WCMC8016V9X |
8Mb (512K x 16) Pseudo Static RAM
|
WEIDA[Weida Semiconductor, Inc.]
|
